Description

A P-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

Features

Ø1.8 V R_DSon rated for Low Voltage Gate Drive

ØVery fast switching

ØTrench MOSFET technology

Applications

ØRelay driver

ØHigh-speed line driver

ØHigh-side loadswitch

ØSwitching circuits