Silicon carbide Schottky diode is a kind of metal-semiconductor device which is made by rectifying the contact barrier formed between metal and N-type semiconductor. The basic structure of Schottky diode is heavily doped N-type 4H-SiC wafer, 4H-SiC epitaxial layer, Schottky contact layer and ohmic contact layer. Silicon carbide SBD makes up for the shortage of silicon SBD. Many metals, such as nickel, gold, palladium, titanium and cobalt, can form Schottky contact with silicon carbide with Schottky barrier height above 1 eV. The barrier height of Au/4H-SiC contact can reach 1.73 eV, and the barrier height of Ti/4H-SiC contact is relatively low, but the highest barrier can also reach 1.1 eV. The height of Schottky barrier between 6H-SiC and various metals varies widely, ranging from 0.5 eV to 1.7 eV. SBD is an ideal device which combines high voltage with low power loss and high temperature resistance.