Silicon carbide (SiC) devices have become feasible candidates for the next generation of low-loss semiconductors. Compared with traditional silicon devices, SiC devices have low on-resistance characteristics and excellent performance at high temperature, high frequency and high voltage. In addition, SiC enables designers to reduce the use of components, thus further reducing the complexity of the design. The low on-resistance characteristics of SiC components are helpful to significantly reduce the energy consumption of equipment, thus helping to design environmentally-friendly products and systems that can reduce CO2 emissions.