Gate-driven IC chip is designed to drive power transistors stacked together in a half-bridge configuration, and it is a buffer circuit for amplifying low voltage or low current from microcontroller or other sources. The gate drive IC chip has two channels: low side and high side. The low side is a fairly simple buffer, which usually has the same ground point as the control input. On the other hand, the high side is carefully designed and referenced to the switching node of the half bridge, thus allowing the use of two N-channel MOSFET or two IGBT. The switching node of the gate-driven IC chip should quickly transition between the high-voltage bus and the power supply grounding, so that we have the opportunity to supply power to the high-side through the bootstrap circuit with the same power supply as when supplying power to the low-side in a cost-effective way. In order to convey whether the output should be high or low, the gate drive IC chip must include a high voltage level converter, and the leakage current of the converter is usually small, only a few microamperes or less.