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Description
The SL30N06D uses advanced trench technology anddesign to provide excellent Rosor, with low gate charge. lcan be used in a wide variety of applications.
Features
Vos =60V,ID =30A
RDS(ON)<35mΩ @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high Eas
Excellent package for good heat dissipation
Special process technology for high ESD capability
Applications
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
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