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【Daily Highlight】Excellent Power MOSFET SL90N03R Built with Advanced Trench Technology

release time:2024-02-02Author source:SlkorBrowse:4355

BYD has recently received a series of good news. According to data from the China Automotive Technology Research Center (CATRC), the number of insurance registrations for BYD's new vehicles reached 2.4 million in 2023, surpassing Volkswagen and occupying a [sensitive term] position in the domestic market. BYD has been in the automotive market for nearly 20 years. With keen insight into the trends of electrification and intelligence in the automotive industry, BYD was the first to transform into a new energy vehicle manufacturer and has achieved great success in this field. Similarly, SLKOR is also an enterprise actively involved in the semiconductor industry. Since 2015, SLKOR has been conducting research and innovation in the semiconductor field. As a company that emerged from Huaqiangbei, SLKOR has a deep understanding of market demand and keeps pace with the arrival of the intelligent and 5G era. By continuously improving technology and products and actively enhancing product quality and performance, SLKOR has gained a good reputation and widespread recognition in the market.

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The SL90N03R is a low-voltage MOSFET produced by SAKO Micro. As an excellent performance power MOSFET, the SL90N03R is manufactured using advanced TRENCH technology. This technology is specially customized to minimize conduction losses, provide excellent switching performance, and withstand high energy pulses in avalanche and commutation modes. Let's take a closer look at this outstanding product.

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Firstly, the SL90N03R features an extremely low on-resistance (RDS(ON)). At 10V and 30A, its on-resistance is only 4.2mΩ. This means that the SL90N03R can achieve higher efficiency and lower energy losses, providing users with more reliable power output. Additionally, the SL90N03R also possesses fast switching characteristics, making it perform exceptionally well in applications such as pulse-width modulation, load switches, and energy management.

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Secondly, the SL90N03R has undergone 100% avalanche testing. This testing method involves subjecting the device to high-voltage testing to verify its reliability and stability under high load conditions. Through this rigorous testing, the SL90N03R has demonstrated its reliability under harsh operating conditions, allowing users to confidently apply it in various high-voltage applications. In addition, the SL90N03R also features improved dv/dt functionality. This function is designed to reduce the voltage and current spikes that occur during the switching process, ensuring stability and reliability. In practical applications, this function can effectively reduce electromagnetic interference and noise, improving the system's anti-interference ability and reliability.

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The SL90N03R can also be applied in areas such as pulse-width modulation, load switches, and energy management, providing users with efficient and reliable solutions. For example, in pulse-width modulation applications, the SL90N03R can be used as a switch to control the load current. Its fast switching characteristics ensure accurate control of the load current, while its extremely low on-resistance enables higher efficiency and lower energy losses.


In summary, the SL90N03R is an excellent power MOSFET built with advanced TRENCH technology. It features extremely low on-resistance (RDS(ON)), fast switching, 100% avalanche testing, and improved dv/dt functionality. It has a wide range of applications, including pulse-width modulation, load switches, and energy management, providing users with efficient and reliable solutions. With the continuous development of technology, the SL90N03R will continue to demonstrate its outstanding performance and reliability in future market competition.

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