Schottky Diodes | Slkor Semiconductors - Shenzhen Slkor Micro Semicon Co., Ltd.

Schottky Diode

A Schottky diode (SBD) is made by utilizing the principle of a metal-semiconductor junction formed by a metal in contact with a semiconductor. Therefore, the SBD, also known as a metal-semiconductor (contact) diode or surface barrier diode, is a hot carrier diode. While a general diode utilizes a PN junction to exert the diode characteristics, a Schottky barrier diode utilizes the Schottky barriers created by the metal-semiconductor junction. Compared to a normal PN junction diode, it is characterized by low forward voltage and fast switching speed.

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IO	VR(V)	VF(V)	IR	Package
0.1A 0.2A 0.5A 1.0A 100mA 10A 150mA 15A 1A 2.0A 200mA 20A 25V 2A 3.0A 300V 30mA 350mA 3A 5.0A 500mA 5A 62A 8A	100V 100mA 10V 150V 200V 20V 250mA 30V 35V 3V 40V 45V 60V 650V 70V	0.15V@10mA 0.24V@0.1mA 0.27V@1mA 0.34V@100mA 0.34V@10mA 0.36V@0.1A 0.36V@100mA 0.37V 0.37V@1mA 0.38V 0.39V@0.5A 0.3V@1mA 0.43V@0.5A 0.45V 0.45V@1A 0.46V@1A 0.47V 0.47V@1mA 0.49V 0.4V 0.51V 0.52V 0.55V 0.55V@1A 0.5V 0.62V@1A 0.69V 0.6V 0.6V@100mA 0.75V 0.76V 0.77V 0.7V 0.85V 0.85V@2A 0.85V@3A 0.92V 0.95V 1.14V@30A 1.16V 1V@100mA 1V@15mA 1V@250mA 1V@40mA 350mV 370mV@1mA 500mV@1A 500mV@2A 500mV@3A 550mV@1A 550mV@2A 550mV@3A 550mV@5A 600mV@200mA 620mV@1A 700mV@1A 700mV@2A 700mV@3A 700mV@5A 800mV@10A 850mV@1A 850mV@2A 850mV@3A 850mV@5A 900mV@3A	0.02mA 0.02μA 0.1mA 0.1uA@50V 0.1μA 0.2mA 0.3mA 0.3μA 0.4mA 0.5mA 0.5μA@30V 1.4mA 1.5μA 100nA@50V 100μA@100V 100μA@20V 100μA@60V 10mA 10μA 10μA@5V 130μA@30V 1mA 1mA@200V 1mA@20V 1mA@40V 1mA@5V 1μA 1μA@20V 200nA@30V 20μA@40V 250μA@20V 2μA 2μA@10V 2μA@15V 2μA@25V 2μA@75V 30nA 30μA 30μA@10V 4μA@40V 500mA 500nA 500nA@30V 500μA@100V 500μA@40V 500μA@60V 50μA 5uA@30V 5μA 5μA@30V 6uA 75uA@15V 7μA	DFN0603 DFN0603-2L DFN1006-2L LL-34 SMA SMAF SMB SMBF SMC SOD-123 SOD-123FL SOD-323 SOD-523 SOD-923 SOT-23 SOT-323 SOT-363 SOT-523 TO-220-2 TO-220F TO-252 TO-263 TO-277

SS32 Schottky Barrier Diodes SMA

3.0A

20V

0.55V

0.5mA

SMA

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Schottky Diode

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