Oloa- TJNE
Oloa- TJNE
SiC Schottky Diode Faʻatasi ai ma le maualuga o le Schottky barrier diode structure, SiC SBD ausia le sili atu i le 600V voltage maualuga, aʻo le maualuga o le malosi o le voltage o le silicon SBD e naʻo le 200V pe sili atu, ma o lona pa'ū i luga o le setete e sili atu le maualalo nai lo le diode faʻaleleia vave. o lona tapuni taimi toe faʻaleleia e laʻititi, o le mea lea e faʻaitiitia ai le gau, e mafua ai le faʻalavelave eletise eletise EMI. O le faʻaaogaina o le SiC SBD e sui ai le oloa autu silicon fast recovery diode FRD, e mafai ona faʻaitiitia ai le aofaʻi o le gau, faʻaleleia le lelei o le eletise, ma e ala i le gaioiga maualuga e ausia ai le miniaturization o vaega passive e pei o inductors ma capacitors. , ma fa'alavelave eletise EMI e maualalo. Silicon carbide SBD e mafai ona faʻaaogaina lautele i ea malulu, sapalai eletise, inverters i photovoltaic power generation systems, afi-toso masini mo taʻavale eletise ma faʻatau vave.
SL12005B SiC Schottky Barrier Diodes TO-220-2 VRRM(V):1200V IF(A):5A VF Ituaiga (V):1.8V PD@TC=25℃(W):110W Paketi:TO-220-2
SL12010B SiC Schottky Diodes TO-220-2 VRRM(V):1200V IF(A):10.5A VF Ituaiga (V):1.8V PD@TC=25℃(W):153W Paketi:TO-220-2
SL12015B SiC Schottky Barrier Rectifiers TO-247-2 VRRM(V):1200V IF(A):15A VF Ituaiga (V):1.8V PD@TC=25℃(W):220W Paketi:TO-247-2
SL12020B SiC Schottky Rectifiers TO-247-2 VRRM(V):1200V IF(A):22A VF Ituaiga (V):1.8V PD@TC=25℃(W):272W Paketi:TO-247-2
SL12030B SiC Power Schottky Diodes TO-247-2 VRRM(V):1200V IF(A):30A VF Ituaiga (V):1.8V PD@TC=25℃(W):288W Paketi:TO-247-2
SL12040B SiC Schottky Diode Rectifier TO-247-2 VRRM(V):1200V IF(A):40A VF Ituaiga (V):1.8V PD@TC=25℃(W):385W Paketi:TO-247-2
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