Products - Sanxin
Products - Sanxin
SiC MOSFET Iyo impedance yedhift layer yesilicon carbide SiC zvishandiso yakaderera pane iyo yeSi zvishandiso, uye yakakwira inomira voltage uye yakaderera impedance inogona kuwanikwa neMOSFET chimiro pasina conductivity modulation. Zvakare, maMOSFET haaburitse muswe wazvino mumusimboti, kuitira kuti kuchinja kurasikirwa kunogona kuderedzwa zvakanyanya uye miniaturization yezvikamu zvekupisa kupisa zvinogona kuwanikwa pakutsiva IGBT neSiC-MOSFET. Uye zvakare, SiC-MOSFET inoshanda frequency inogona kunge yakakwira zvakanyanya kupfuura iyo IGBT, yayo yedunhu inductor capacitor zvikamu zvidiki, zviri nyore kuona iyo system saizi diki uye huremu. Kuenzaniswa neiyo 600V ~ 900V voltage Si-MOSFET, SiC-MOSFET chip nzvimbo idiki, inogona kushandiswa mumapakeji madiki, uye kurasikirwa kwedhiyodhi yemuviri kudiki kwazvo. Parizvino, maSiC MOSFET anonyanya kushandiswa mumagetsi ekupedzisira maindasitiri emagetsi, epamusoro-ekupedzisira inverters uye anoshandura, epamusoro-yekupedzisira mota kudhonza uye kutonga, nezvimwe.
SL19N120A Yakakwira Voltage MOSFET TO-247-3 Pakeji:TO-247-3 VDSS(V): 1200V ID@TC=25℃(A):19A RDSON(Ω): 160mΩ@20V,10A PD(W):134W P/N:N -upamhi
TO-247-3 1200V 19A 160mΩ@20V,10A 134W N -hupamhi
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