Slkor electronics’ SLPESDNC2FD3V3B ESD protection diode offers an effective solution for SIM card interfaces in mobile and IoT devices, addressing the growing need for electrostatic protection with compact design and precise specifications.

1. Voltage Compatibility

The SLPESDNC2FD3V3B is optimized for the typical 1.8V or 3V SIM card supply voltage:

- Reverse Working Voltage: 3.3V ensures no erroneous activation during normal operation.

- Breakdown Voltage: 3.6V quickly conducts during ESD events, clamping overvoltages below 8V, protecting sensitive circuits.

- Clamping Voltage: 8V effectively shields low-voltage systems, such as baseband chips and RF switches.

2. Ultra-Low Junction Capacitance

With a typical junction capacitance of 15pF, the diode minimizes parasitic effects during high-frequency data transmission (e.g., I²C, SPI, USB), ensuring stable communication without signal degradation, especially in 5G smartphones and IoT devices.

3. Low Leakage Current

At 1µA leakage, the SLPESDNC2FD3V3B optimizes power consumption in battery-powered devices:

- For IoT devices, it reduces standby power usage, extending battery life.

- For smartphones, it balances power efficiency with effective ESD protection.

4. Compact DFN1006 Package

The DFN1006 leadless package (1.0mm x 0.6mm) reduces the device's size by over 60%, enabling efficient protection within limited space, ideal for dense smartphone motherboard layouts. It also supports improved manufacturing processes, such as side soldering and automated quality inspection.

5. Robust Clamping Performance

With ultra-low dynamic resistance (0.8Ω), the device provides excellent clamping performance under extreme ESD conditions (±8kV contact, ±15kV air discharge), protecting sensitive circuits from repeated ESD impacts. Its fast response and low residual voltage ensure continuous protection for SIM card interfaces.

In summary, the SLPESDNC2FD3V3B diode provides efficient, reliable protection for SIM card interfaces, ensuring low-voltage compatibility, high-frequency signal integrity, low power consumption, and robust physical protection in a compact form.

About Slkor：

SLKOR, headquartered in Shenzhen, China, is a rapidly emerging national high-tech enterprise in the power semiconductor sector. With R&D centers in Beijing and Suzhou, its core technical team originates from Tsinghua University. As an innovator in silicon carbide (SiC) power device technology, SLKOR's products are widely used in new energy vehicles, photovoltaic power generation, industrial IoT, and consumer electronics, providing critical semiconductor solutions to over 10,000 clients globally. The company delivers more than 2 billion units annually, with its SiC MOSFETs and 5th-generation ultrafast recovery SBD diodes setting industry benchmarks in efficiency ratio and thermal stability. SLKOR holds over 100 invention patents and offers 2,000+ product models, continually expanding its IP portfolio across power devices, sensors, and power management ICs. Certifications including ISO 9001, EU RoHS/REACH, and CP65 compliance demonstrate the company's steadfast commitment to technological innovation, lean manufacturing, and sustainable development.