Industry News | Slkor Semiconductors

Updated: 2024-01-31
Views: 9342

Bi-directional IGBT is a new type of bi-directional IGBT power semiconductor device with five layers and four segments, which is put forward by the industry in view of some shortcomings of conventional IGBT in various applications. Its core is to adopt a symmetrical mechanism based on planar gate IGBT and a bidirection……

see details >>

What is MOSFET? What are the functions and characteristics of the MOSFET?

Updated: 2024-01-31
Views: 11223

What is MOSFET? What are the functions and characteristics of the MOS tube? MOS field effect transistors are usually referred to as field effect pipes, which is a semiconductor device based on the principle of field effects. Compared with ordinary bipolar transistors, FET has the characteristics of high input impedance……

see details >>

Zero Voltage Switching (ZVS) Circuit Principles and Design

Updated: 2023-12-25
Views: 13724

Zero Voltage Switching (ZVS) / Zero Current Switching (ZCS) technology, also known as soft-switching technology, can improve the efficiency of low-power soft-switching power supplies up to 80% to 85%. In the 1970s, resonant switching power supplies laid the foundation for soft-switching technology.

see details >>

Apple brings the world's first 3nm computer chip

Updated: 2023-11-03
Views: 9548

In the development of computer processors, there is a very interesting period in history. From 2009 to 2017, Intel released a total of 7 generations of process……

see details >>

MediaTek releases financial report for the third quarter of 2023

Updated: 2023-10-28
Views: 9794

MediaTek releases financial report for the third quarter of 2023

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (IX)

Updated: 2023-10-14
Views: 9000

In addition to the laboratory-scale EUV light used by NIST to analyze semiconductor components, Dr. Steve Grantham also presented a wealth of resources at NIST's Synchrotron Ultraviolet Radiation Facility (SURF III) during the working group meeting. When charged particles move along a curved path, they emit synchrot……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VIII)

Updated: 2023-10-14
Views: 8293

In addition to the laboratory-scale EUV light used by NIST to analyze semiconductor components, Dr. Steve Grantham also presented a wealth of resources at NIST's Synchrotron Ultraviolet Radiation Facility (SURF III) during the working group meeting. When charged particles move along a curved path, they emit synchrot……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VII)

Updated: 2023-10-14
Views: 8465

At the working group meeting, researchers from NIST discussed three main themes related to using EUV as an analytical tool to assist the semiconductor manufacturing industry. The three methods for utilizing EUV light as an analytical technique are: (1) high harmonic generation (HHG), (2) synchrotron radiation, and (3) ……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (VI)

Updated: 2023-10-14
Views: 9030

The main process change that affects yield is edge-placement error (EPE). This occurs when unexpected nanoscale irregularities are displayed in the edges and sidewalls of photoresist patterns. These irregularities are random and colloquially referred to as line-edge roughness (LER). As device sizes continue to shrink, ……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (V)

Updated: 2023-10-14
Views: 8132

Absolute radiometric measurement is important not only for the development of lithography processes and instrument acceptance tests but also for the quantitative understanding of EUV light generation processes. Predictive modeling of this process has lagged behind the development of EUV tools themselves. Improving mode……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (IV)

Updated: 2023-10-14
Views: 10692

NIST is currently developing an instrument for measuring SoS at higher pressures and temperatures. The SoS instrument is part of Dr. Elizabeth Rasmussen's National Research Council (NRC) postdoctoral fellowship in metal additive manufacturing. A U.S. patent on the design and operation of the instrument was submitted in……

see details >>

Official report from the United States: In-depth analysis of the current situation, demand, and development of EUV lithography (III)

Updated: 2023-10-14
Views: 9130

2.1 Droplet Generator: Extreme Thermophysical Properties and Modeling The droplet generator is an important component of the EUVL scanner assembly (Figure 3)……

see details >>

Events

News recommendation

Popular tags

Products Recommended

see more +

Advisory Service