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【Daily Highlight】SL78L12 3-Terminal Voltage Regulators

Updated: 2023-09-13
Views: 7912

The 78L12 is a SURFACE MOUNT low-dropout voltage regulator that is capable of providing a regulated 12VDC output at a current up to 100mA. The low-dropout functionality enables this voltage regulator to work with a supply voltage only 1.7V higher than the output voltage. This is a tiny, but hand-solderable 3-Lead SOT-8……

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Selectivity and Cost Control in Etching Processes (III)

Updated: 2023-09-12
Views: 11584

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

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Selectivity and Cost Control in Etching Processes (II)

Updated: 2023-09-12
Views: 10180

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

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Selectivity and Cost Control in Etching Processes (I)

Updated: 2023-09-12
Views: 11241

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

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【Daily Highlight】78M05 Linear Voltage Regulators

Updated: 2023-09-12
Views: 8537

The 78MXX series of three-terminal package with several fixed output voltages making it useful in a wide range of applications.

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Everything about IGBT (II)

Updated: 2023-09-11
Views: 11389

Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, just a few years ago, the preferred solution for many applications was the Insulated Gate Bipolar Transistor (IGBT). There is……

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Everything about IGBT (I)

Updated: 2023-09-11
Views: 10841

Although some may consider IGBT as "conventional" technology, it still plays a significant role in high-power applications. Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, j……

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Power Module (IPM), IGBT, and Automotive Power Devices (III)

Updated: 2023-09-11
Views: 10351

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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Power Module (IPM), IGBT, and Automotive Power Devices (II)

Updated: 2023-09-11
Views: 10915

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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Power Module (IPM), IGBT, and Automotive Power Devices (I)

Updated: 2023-09-11
Views: 13761

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (III)

Updated: 2023-09-09
Views: 11069

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (II)

Updated: 2023-09-09
Views: 14441

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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