ngwaahịa
ngwaahịa
SiC MOSFET Mgbochi nke igwe mkpuchi silicon carbide SiC dị ala karịa nke ngwaọrụ Si, yana enwere ike nweta voltaji dị elu na impedance dị ala site na usoro MOSFET na-enweghị mgbanwe mgbanwe. Ọzọkwa, MOSFET adịghị emepụta ọdụ ọdụ ugbu a n'ụkpụrụ, nke mere na mgbanwe mfu nwere ike ibelata nke ukwuu na enwere ike nweta obere ihe mkpofu ọkụ mgbe ejiri SiC-MOSFET dochie IGBT. Na mgbakwunye, SiC-MOSFET arụ ọrụ ugboro nwere ike ịdị elu karịa IGBT, sekit inductor capacitor akụkụ pere mpe, dị mfe ịghọta usoro obere nha na ibu. E jiri ya tụnyere otu 600V ~ 900V voltaji Si-MOSFET, mpaghara mgbawa SiC-MOSFET dị obere, enwere ike iji ya na obere ngwugwu, na mgbake diode ahụ dị obere. Ugbu a, SiC MOSFET na-ejikarị na-eji ike ụlọ ọrụ mmepụta ihe dị elu, ndị na-atụgharị elu na ndị na-agbanwe agbanwe, nnukwu moto ịdọrọ na njikwa, wdg.
SL19N120A High Voltage MOSFET TO-247-3 Ngwugwu: TO-247-3 VDSS(V): 1200V ID@TC=25℃(A)):19A RDSON(Ω):160mΩ@20V,10A PD(W)))(134W P/N:N -obosara
TO-247-3 1200V 19A 160mΩ@20V,10A 134W N - obosara
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