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Power Module (IPM), IGBT, and Automotive Power Devices (III)

Updated: 2023-09-11
Views: 12379

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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Power Module (IPM), IGBT, and Automotive Power Devices (II)

Updated: 2023-09-11
Views: 12842

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

see details >>

Power Module (IPM), IGBT, and Automotive Power Devices (I)

Updated: 2023-09-11
Views: 16125

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (III)

Updated: 2023-09-09
Views: 13198

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (II)

Updated: 2023-09-09
Views: 16906

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (I)

Updated: 2023-09-09
Views: 16991

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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What should be done about the chip industry? (III)

Updated: 2023-09-09
Views: 12613

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……

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What should be done about the chip industry? (II)

Updated: 2023-09-09
Views: 13205

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……

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What should be done about the chip industry? (I)

Updated: 2023-09-09
Views: 12812

Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……

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【Daily Highlight】1117-1.8 1A Lowdropout Voltage Regulator

Updated: 2023-09-08
Views: 10517

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【Daily Highlight】SL27517 Single-channel Gate Driver

Updated: 2023-09-07
Views: 9444

The SL27517 is a single-channel 4A high-speed low-side gate driver that efficiently and safely drives MOSFETs, IGBTs, and emerging wide-bandgap power devices. With characteristics of low propagation delay and compact SOT-23, it can achieve the MOSFET switching frequency of hundreds ofkHz.The chip is applicable to synch……

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Why are AI developers so crazy? (III)

Updated: 2023-09-06
Views: 11596

Epilogue Honestly speaking, I have also tried many AI applications myself, including many that claim to be artificial intelligence but are actually developed from artificial stupidity. For example, Midjourney initially couldn't draw pictures, bu

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