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  • Updated: 2024-03-18
  • Views: 9023
The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the contin……
  • Updated: 2024-03-15
  • Views: 9706
The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……
  • Updated: 2024-03-14
  • Views: 10789
In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……
  • Updated: 2024-03-14
  • Views: 11137
The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……
  • Updated: 2024-03-14
  • Views: 9785
MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, el……
  • Updated: 2024-03-14
  • Views: 14089
Explanation of Common Semiconductor Defect Terminology
  • Updated: 2024-03-14
  • Views: 10979
This article introduces the design ideas of the motor controller IGBT module driving circuit, explains the characteristics of the IGBT module, the design and protection of the gate -drive circuit, and the current, voltage, and temperature protection of the IGBT module in normal operation. And provide corresponding desi……
  • Updated: 2024-03-13
  • Views: 15668
Photolithography technology, as a precision microfabrication process, involves transferring meticulously designed micro-patterns onto photosensitive materials. At its core, it utilizes photolithography machines to accurately project patterns onto substrates, enabling the precise manufacturing of microstructures.
  • Updated: 2024-03-13
  • Views: 13655
Parasitic Capacitance and Temperature Characteristics of MOSFET
  • Updated: 2024-03-13
  • Views: 11135
The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in commu……
  • Updated: 2024-03-13
  • Views: 12274
MOSFET, field effect transistor (MOSFET), is a kind of voltage-controlled power switching element, which is widely used in switching power supply, inverter, DC motor driver and other devices, and is the core component of power electronics.
  • Updated: 2024-03-12
  • Views: 12830
​Semiconductor materials are at the core of the semiconductor industry, serving as the foundation for manufacturing electronic and computer chips. There is a wi……

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