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  • Updated: 2024-03-11
  • Views: 15965
Vehicle-mounted radar is one of the core sensors of Advanced Assisted Driving (ADAS) and unmanned driving, and the vehicle-mounted radar chip is the core of vehicle-mounted radar. Nowadays, the highly integrated (MMIC+DSP/MCU) vehicle-level chip provides a key way for miniaturization, high reliability, stability and lo……
  • Updated: 2024-03-11
  • Views: 11956
The difference between the IGBT discrete and the IGBT module IGBT module can be regarded as the functional improvement and upgrade of the IGBT discrete. Their application fields are basically the same. However, due to the integration of various drivers and protection circuits, the installation of the IGBT module is gre……
  • Updated: 2024-03-11
  • Views: 14417
How much do you know about chip packaging? Why should the chip be encapsulated? What are the types of chip packaging? Chip packaging: In simple terms, it is to put the integrated circuit nude (DIE) produced by Foundry on a substrate with a bearing effect, then lead the tube foot, and then fix the packaging into a whole……
  • Updated: 2024-03-11
  • Views: 12835
Now "end-to-end" is popular. Let's take cell phone call as an example and observe the whole process of signal from cell phone to base station to see what baseband and RF are for.
  • Updated: 2024-03-11
  • Views: 9327
Slkor Semiconductor, as a renowned high-tech enterprise, exhibits immense development potential and market prospects. In the present-day applications of portable devices and battery power systems, high-performance and low-power semiconductor devices are increasingly valued. The SL90P03G product from Slkor Semiconductor……
  • Updated: 2024-03-08
  • Views: 8128
Slkor Semiconductor's SL18N20 is a silicon N-channel enhancement mode VDMOSFET, developed using self-aligned planar technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This excellent transistor product has a wide range of applications in various power switch circuits, pr……
  • Updated: 2024-03-07
  • Views: 9390
One highlight in Slkor Micro Semiconductor's product line is the high-voltage MOSFET product SL5N100P. The SL5N100P adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, continuous drain current (Id) of 5A, and power dissipation (Pd) of 48W. The on-state resistance (RDS(on)@Vgs,Id) is only 4……
  • Updated: 2024-03-07
  • Views: 7887
The high-voltage MOSFET SL5N100F is a star product in Slkor Micro Semiconductor's product line. The SL5N100F adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, a continuous drain current (Id) of 5A, and a power dissipation (Pd) of up to 60W. Its on-state resistance (RDS(on)@Vgs,Id) is onl……
  • Updated: 2024-03-06
  • Views: 8590
Slkor, as a national high-tech enterprise, has obtained ISO9001 quality management system certification, as well as EU RoHS and REACH certifications, showcasing its high standards in product quality and environmental protection. The company's products are widely used in the 5G field and have broad applications in areas……
  • Updated: 2024-03-05
  • Views: 7973
The SL11N65CD is an N-channel power MOSFET with a drain-source voltage of 650V, continuous drain current of 11A, and a power rating of 87W. Additionally, it has an on-state resistance of 318mΩ @ 10V, 4.0A, threshold voltage of 4.5V @ 0.8mA, and comes in a TO-252 package. These parameters make the SL11N65CD highly suita……
  • Updated: 2024-03-05
  • Views: 8290
The SL15N65CD is a power MOSFET produced using Slkor's advanced Superjunction MOSFET technology. This advanced technology is specially tailored to minimize on-state resistance, providing excellent switching performance, withstanding high-energy pulses in avalanche and commutation modes, and demonstrating outstanding st……
  • Updated: 2024-03-04
  • Views: 9766
With the rapid development of the Internet of Things and artificial intelligence technologies, smart homes are gradually becoming a reality and entering thousands of households. Through the integration of various distinctive smart terminal devices, interconnection and mutual control have been achieved, allowing people ……

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