【Daily Highlight】The Medium Voltage MOSFET SL4421

Updated: 2024-03-20
Views: 9979

The SL4421 is a P-channel MOSFET with a -60V drain-source voltage and a -8.5A continuous drain current, known for its low on-state resistance (23mΩ at -10V, -8A) and a relatively low threshold voltage (-1.6V at 250uA). These characteristics enable the SL4421 to control, protect, and manage battery charging and discharg……

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【Daily Highlight】The Medium Voltage MOSFET SL12N10

Updated: 2024-03-19
Views: 10617

The SL12N10 is an N-channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 12A. It has gained attention for its low on-state resistance (130mΩ @ 10V, 220mA) and relatively low threshold voltage (2V @ 250uA). In the design of today's portable charging devices such as power banks and wireles……

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【Daily Highlight】The Medium Voltage MOSFET SL30N06D

Updated: 2024-03-18
Views: 9197

The SL30N06D is an outstanding N-channel MOSFET, characterized by its high drain-to-source voltage (60V), high current-carrying capacity (30A), low on-state resistance (27mΩ at 10V, 30A), and low threshold voltage (1.6V at 250uA). These features make it an ideal choice for automotive electronic systems. With the contin……

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【Daily Highlight】The Medium Voltage MOSFET 2N7002KW

Updated: 2024-03-15
Views: 9963

The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……

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What is the difference between MOS tube and IGBT?

Updated: 2024-03-14
Views: 11186

In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……

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One article understands IGBT

Updated: 2024-03-14
Views: 11433

The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……

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【Daily Highlight】The Medium Voltage MOSFET MMBF170L

Updated: 2024-03-14
Views: 10009

MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, el……

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Explanation of Common Semiconductor Defect Terminology

Updated: 2024-03-14
Views: 14530

Explanation of Common Semiconductor Defect Terminology

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Driver technology of the new energy vehicle motor controller IGBT module

Updated: 2024-03-14
Views: 11289

This article introduces the design ideas of the motor controller IGBT module driving circuit, explains the characteristics of the IGBT module, the design and protection of the gate -drive circuit, and the current, voltage, and temperature protection of the IGBT module in normal operation. And provide corresponding desi……

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The development of photolithography technology and a brief introduction to photolithography machines

Updated: 2024-03-13
Views: 16654

Photolithography technology, as a precision microfabrication process, involves transferring meticulously designed micro-patterns onto photosensitive materials. At its core, it utilizes photolithography machines to accurately project patterns onto substrates, enabling the precise manufacturing of microstructures.

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What are the characteristics of MOSFET?

Updated: 2024-03-13
Views: 14167

Parasitic Capacitance and Temperature Characteristics of MOSFET

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【Daily Highlight】The Medium Voltage MOSFET IRF540NS

Updated: 2024-03-13
Views: 11353

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in commu……

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