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  • Updated: 2023-09-11
  • Views: 9203
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-11
  • Views: 9607
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-11
  • Views: 11951
Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……
  • Updated: 2023-09-09
  • Views: 9667
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 12581
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 11656
The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……
  • Updated: 2023-09-09
  • Views: 9171
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……
  • Updated: 2023-09-09
  • Views: 9691
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……
  • Updated: 2023-09-09
  • Views: 9703
Against the backdrop of serious global crises such as war, climate change, aging populations, and supply chain disruptions, coupled with the demand for better liquidity, reliable energy, and healthcare, the role of semiconductors on the world stage has never been more important. At this year's ITF World conference orga……
  • Updated: 2023-09-07
  • Views: 7612
The SL27517 is a single-channel 4A high-speed low-side gate driver that efficiently and safely drives MOSFETs, IGBTs, and emerging wide-bandgap power devices. With characteristics of low propagation delay and compact SOT-23, it can achieve the MOSFET switching frequency of hundreds ofkHz.The chip is applicable to synch……
  • Updated: 2023-09-06
  • Views: 8603
Epilogue Honestly speaking, I have also tried many AI applications myself, including many that claim to be artificial intelligence but are actually developed from artificial stupidity. For example, Midjourney initially couldn't draw pictures, bu

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