Technical Blogs-SLKOR Semiconductor: Discrete Semiconductors, TVS、ESD、diodes、 components、transistors、mosfet、igbt、Rectifier、Discrete Power Devices、SCR、TRIAC、Zener Diode; Integrated Semiconductors, Op-amp、hall sensor、 Linear Regulator / LDO、DC-DC Convertor、AC-DC Convertor and Optocoupler

Updated: 2024-08-01
Views: 8499

Low-voltage MOSFETs play a crucial role in modern electronics, with characteristics and applications spanning diverse fields. This article will delve into the parameter characteristics, roles, selection principles, and specific applications of low-voltage MOSFETs in various fields, while also introducing several well-k……

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Silicon Controlled Rectifier (SCR): Crucial Component in Power Electronics

Updated: 2024-07-01
Views: 9800

The Silicon Controlled Rectifier (SCR), also known as thyristor, operates based on controlling the voltage applied to its gate electrode to control conduction between its main terminals. It consists of four layers of semiconducting material: P-type, N-type, P-type, and N-type. Under forward bias, conduction occurs only……

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IGBT: Key Component of Power Electronic Devices

Updated: 2024-07-01
Views: 9325

In the field of modern electrical engineering, the Insulated Gate Bipolar Transistor (IGBT) plays a crucial role. It is not merely a power semiconductor device but also a core technology enabling energy conversion, power control, and regulation. This article delves into the definition, working principles, application a……

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Top 10 leading electronic component manufacturers

Updated: 2024-06-26
Views: 9624

This article focuses on today's top ten electronic component manufacturers, companies that lead and shape the market with their innovations, technologies, and strategic market presence. We selected these companies based on their search popularity on Octopart.com from December 15, 2023, to March 15, 2024, providing a co……

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Top 10 semiconductor companies

Updated: 2024-05-17
Views: 10113

Top 10 semiconductor companies

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One article understands IGBT

Updated: 2024-03-14
Views: 9382

The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……

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【Daily Highlight】Highly efficient and reliable medium-voltage N-channel MOSFET SL64N10

Updated: 2024-02-23
Views: 9657

SLKOR Semiconductor has introduced a high-performance medium-voltage N-channel MOSFET, the SL64N10, which provides reliable support for the efficient operation of electronic devices. This device boasts a range of excellent features and parameters, making it suitable for various application scenarios.

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【Daily Highlight】SLKOR Hall Sensor SLSS39E-9: Microstructures and Multifunctional Applications

Updated: 2023-11-28
Views: 8101

The SLSS39E linear Hall effect sensor is a compact multifunctional device that operates using the magnetic field of a permanent magnet. This sensor features a linear source output voltage that depends on the power supply voltage setting and varies proportionally with the strength of the magnetic field. Compared to othe……

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【Daily Highlight】SL40T65FL Excellent domestic alternative products bring more choices to manufacturers

Updated: 2023-10-10
Views: 7238

Today, we will introduce the Slkor SL40T65FL.

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【Daily Highlight】SL15T120FL contribute to the fields of high-frequency converters and uninterruptible power supplies

Updated: 2023-09-28
Views: 8316

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When it comes to SiC taken to the extreme, what are the options and future prospects?(I)

Updated: 2023-09-15
Views: 9460

The remarkable rise of the global silicon carbide (SiC) market has undoubtedly attracted attention. As early as 2017, the transition from silicon to SiC in power semiconductor applications began with the installation of SiC in Tesla's Model 3. In 2019, chip manufacturer Wolfspeed chose the Nanocenter facility near Utic……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (I)

Updated: 2023-09-09
Views: 11078

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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