Izinzuzo yethu
- Amandla okushayela amanje aphezulu afinyelela ku-1A okuqhubekayo / i-peak engu-2A yokuphathwa komthwalo wedivayisi ephathekayo
- I-voltage ephansi yokugcwala ukuze kusebenze kahle kakhulu futhi kulahlekelwe amandla aphansi
- I-Epitaxial planar die yokusebenza kukagesi okuzinzile kanye nokungaguquguquki okuhle
- Iphakheji encane ye-SOT-23 ilungele ama-elekthronikhi aphathekayo anesikhala esincane
- Idizayini engenalo i-lead ehambisana nezindinganiso zemvelo zomhlaba wonke
- Ububanzi bokushisa kokusebenza okubanzi ukuze kusetshenziswe izimboni kanye nabathengi ngendlela ethembekile
- Iphakheji yetheyiphu ne-reel ilungele ukuhlanganiswa kwe-SMT okusheshayo
Incazelo
I-MMBT589 iyi-transistor yokushintsha i-silicon ye-PNP epitaxial kuphakheji ye-SOT‑23 yokukhweza phezulu. Yenzelwe ukushintshashintsha kwamanje aphezulu kanye nokuphathwa komthwalo ezinhlelweni zokusebenza ze-elekthronikhi ezisebenzisa ibhethri neziphathekayo. Idivayisi ine-DC current gain ephezulu, i-voltage ephansi yokugcwala, kanye nendawo yokusebenza ephephile ebanzi, isekela kufika ku-1A continuous collector current kanye ne-2A peak current.
EZIPHUMA
- I-transistor yokushintsha yamandla aphezulu ye-PNP
- Ukwakhiwa kwe-Epitaxial planar die
- Iphakheji yokufaka indawo ye-SOT‑23
- Akukho mthofu otholakalayo
- Umsinga wokuqoqa oqhubekayo: IC = −1.0A; I-Peak: ICM = −2.0A
- I-VCE ephansi (ehleliwe) ukuze isebenze kahle kakhulu
- I-VCBO = −50V, i-VCEO = −30V, i-VEBO = −5V
- Ukushabalalisa Amandla: I-PC = 0.31W
- Imvamisa yokuguquka: fT = 100MHz (uhlobo)
- Izinga lokushisa lokuhlangana/lokugcina: −55℃ kuya ku-+150℃
Izicelo
- Ukuphathwa komthwalo wedivayisi kagesi ephathekayo
- Ukushintshwa kwamandla kwemishini esebenzisa ibhethri
- Amasekethe omshayeli wedivayisi yeselula
- Umsindo ophathekayo kanye nezinto zikagesi zabathengi
- Amamojula okulawula aphathekayo ezimboni
- Izinhlelo zokusebenza zokushintsha i-PNP zamanje kakhulu
- Izinhlelo zokuphatha amandla aphansi