Features

l0.22 A, 25 V. RDS(ON) =4 Ω @ VGS = 4.5 V

   RDS(ON)  = 5Ω @ VGS = 2.7 V.

lVery low level gate drive requirements allowing direct operation in 3V circuits. Vas(h) < 1.5V.

lGate-Source Zener for ESD ruggedness >6ky Human Body Model

lReplace multiple NPN digital transistors with one DMOSFET.