Description

lThis p-Channel MOSFET uses advanced trench technology anddesign to provide excellent Roson, with low gate charge. It can be used in a wide variety of applications.

Features

lVDS=-40V,l=-10A,RDS(ON)<15m Ω @VGS=-10V

lLow gate charge.

lGreen device available.

lAdvanced high cell denity trench technology for ultra RDS(ON).

lExcellent package for good heat dissipation.