Description：

lThis N+P Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features：

lN-Channel:VDS=40V,ID=-10A,RDS(ON)<22mΩ@VGS=-10V

lP-Channel:VDS=-40V,ID=-8A,RDS(ON)<53mΩ@VGS=-10V

lLow gate charge.

lGreen device available.

lAdvanced high cell denity trench technology for ultra low RDS(ON).

lExcellent package for good heat dissipation.