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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:NPN
Vceo: 30V
Ic: 100mA
Pd: 250mW
VCE(sat)@Ic,Ib: 90mV@10mA,0.5mA
fT: 100MHz
Features
lLow current (max.100 mA)
lLow voltage (max. 45 V)
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