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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:PNP
Vceo: -400V
Ic: -200mA
Pd: 350mW
VCE(sat)@Ic,Ib: -0.2V@-10mA,-1mA
fT: 50MHz
Features
lHigh Breakdown Voltage
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