Snelle hersteldiodeDe interne structuur van de snelhersteldiode verschilt van de gewone PN-junctiediode, die tot de PIN-junctiediode behoort, dwz het basisgebied I wordt toegevoegd in het midden van het P-type siliciummateriaal en het N-type siliciummateriaal om de PIN te vormen silicium wafeltje. Omdat het basisgebied erg dun is, is de omgekeerde herstellading erg klein, dus de omgekeerde hersteltijd van de snelle hersteldiode is korter, de voorwaartse spanningsval is lager en de omgekeerde doorslagspanning (bestandsspanningswaarde) is hoger.
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