The 2N7002KW is an N-channel MOSFET suitable for various low-power, high-efficiency circuit designs. It features a high drain-source voltage (60V) and continuous drain current (340mA), capable of withstanding certain voltage and current loads. Additionally, its low on-state resistance (1.1Ω @ 4.5V, 200mA) and low thres……

In the electronic circuit, MOS tube and IGBT tube often appear, they can be used as switch components, and MOS tubes and IGBT tubes are also similar in appearance and characteristic parameters. So why do some circuits use MOS tubes, and some circuits use IGBT tube? Let's take a look at what is the difference between th……

The full name of IGBT is insulated gate bipolar transistor, which is a compound structure device. It combines the advantages of MOS transistor and BJT bipolar transistor. It is widely used in the fields of voltage-current conversion and power output, especially in the high-voltage and high-current fields. IGBT is one o……

MMBF170L is an N-channel MOSFET known for its excellent product characteristics, including appropriate drain-source voltage (60V), continuous drain current (300mA), low on-state resistance (3Ω @ 10V, 500mA), and a lower threshold voltage (2.5V @ 250uA), making it an ideal choice for applications in power management, el……

This article introduces the design ideas of the motor controller IGBT module driving circuit, explains the characteristics of the IGBT module, the design and protection of the gate -drive circuit, and the current, voltage, and temperature protection of the IGBT module in normal operation. And provide corresponding desi……

The medium-voltage MOSFET IRF540NS is an outstanding N-channel field-effect transistor, known for its high drain-source voltage, continuous drain current, low on-state resistance, and low threshold voltage. These characteristics make it an ideal choice for power management, drive control, and energy conversion in commu……

MOSFET, field effect transistor (MOSFET), is a kind of voltage-controlled power switching element, which is widely used in switching power supply, inverter, DC motor driver and other devices, and is the core component of power electronics.

With the continuous advancement of technology, contactless technology has become an increasingly popular and important technological means in the field of smart homes. This technology, through various methods such as wireless signals, electromagnetic wave sensing, radar detection, has realized the interaction or data t……

Slkor Semiconductor, as a renowned high-tech enterprise, exhibits immense development potential and market prospects. In the present-day applications of portable devices and battery power systems, high-performance and low-power semiconductor devices are increasingly valued. The SL90P03G product from Slkor Semiconductor……

Slkor Semiconductor's SL18N20 is a silicon N-channel enhancement mode VDMOSFET, developed using self-aligned planar technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. This excellent transistor product has a wide range of applications in various power switch circuits, pr……

One highlight in Slkor Micro Semiconductor's product line is the high-voltage MOSFET product SL5N100P. The SL5N100P adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, continuous drain current (Id) of 5A, and power dissipation (Pd) of 48W. The on-state resistance (RDS(on)@Vgs,Id) is only 4……

The high-voltage MOSFET SL5N100F is a star product in Slkor Micro Semiconductor's product line. The SL5N100F adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, a continuous drain current (Id) of 5A, and a power dissipation (Pd) of up to 60W. Its on-state resistance (RDS(on)@Vgs,Id) is onl……