Electronics Basics | Slkor Semiconductor

When it comes to SiC taken to the extreme, what are the options and future prospects?(I)

Updated: 2023-09-15
Views: 13662

The remarkable rise of the global silicon carbide (SiC) market has undoubtedly attracted attention. As early as 2017, the transition from silicon to SiC in power semiconductor applications began with the installation of SiC in Tesla's Model 3. In 2019, chip manufacturer Wolfspeed chose the Nanocenter facility near Utic……

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Selectivity and Cost Control in Etching Processes (III)

Updated: 2023-09-12
Views: 13152

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

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Selectivity and Cost Control in Etching Processes (II)

Updated: 2023-09-12
Views: 11897

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

see details >>

Selectivity and Cost Control in Etching Processes (I)

Updated: 2023-09-12
Views: 12649

Plasma etching may be the most critical process in semiconductor manufacturing, and it can also be one of the most complex operations in all wafer fabrication processes, second only to lithography. Nearly half of the wafer manufacturing steps rely on plasma, a high-energy ionized gas, to perform their tasks.

see details >>

Everything about IGBT (II)

Updated: 2023-09-11
Views: 12799

Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, just a few years ago, the preferred solution for many applications was the Insulated Gate Bipolar Transistor (IGBT). There is……

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Everything about IGBT (I)

Updated: 2023-09-11
Views: 12406

Although some may consider IGBT as "conventional" technology, it still plays a significant role in high-power applications. Today, most news and discussions in the semiconductor industry revolve around devices based on new wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN). However, j……

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Power Module (IPM), IGBT, and Automotive Power Devices (III)

Updated: 2023-09-11
Views: 11697

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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Power Module (IPM), IGBT, and Automotive Power Devices (II)

Updated: 2023-09-11
Views: 12284

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

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Power Module (IPM), IGBT, and Automotive Power Devices (I)

Updated: 2023-09-11
Views: 15498

Power semiconductor devices play a significant role in modern power control and drive systems. IGBT modules and IPM modules are two of the most common types of devices used in these systems. They can be utilized for controlling high-power loads and driving motors, among other applications. However, they have different ……

see details >>

The structure and manufacturing process of Gallium Nitride (GaN) devices (III)

Updated: 2023-09-09
Views: 12477

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (II)

Updated: 2023-09-09
Views: 16194

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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The structure and manufacturing process of Gallium Nitride (GaN) devices (I)

Updated: 2023-09-09
Views: 16186

The characteristics of Gallium Nitride (GaN) power devices and silicon-based power devices are fundamentally different due to the difference in epitaxial structures. This article provides a thorough comparison between GaN HEMT (High Electron Mobility Transistor) and silicon-based MOS (Metal-Oxide-Semiconductor) transis……

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