In the context of the rapid development of the new energy vehicle industry, home charging stations, as the core equipment for electric vehicle energy supply, directly relate to the safety of user property and life. The SLESD8D5V0C electrostatic discharge (ESD) diode from Slkor, with its ultra-compact packaging and excellent electrostatic protection performance, is becoming a key component in the protection design of onboard charging systems.

Slkor Electrostatic Discharge Diode SLESD8D5V0C product photo

 1. Technical Features and Protection Mechanism

The SLESD8D5V0C is packaged in a DFN1006-2L form, measuring just 1.0mm × 0.6mm with a thickness of only 0.3mm, making it perfectly suited for the high-density PCB layout inside charging stations. Its core parameters include a 5V reverse working voltage (VRWM), precisely matching the 5V communication interface of the onboard charging module, and a minimum breakdown voltage (VBR min) of 5.6V, ensuring protection is activated during voltage fluctuations. In the event of electrostatic discharge, the 12V clamping voltage (VC) limits transient high voltage to a safe threshold, preventing damage to downstream chips. The ultra-low 10pF junction capacitance (CJ) ensures minimal signal attenuation—less than 0.5dB—during high-frequency signal transmission scenarios such as USB-C and CAN bus, thus maintaining stable real-time communication between the charging station and the vehicle's BMS.

Slkor Electrostatic Discharge Diode SLESD8D5V0C specification

 2. Protection Challenges in Onboard Charging Systems

Home charging stations face multiple threats in complex electromagnetic environments:

1. User-Induced Static Electricity: Contact discharges when inserting or removing the charging gun can reach ±8kV, with air discharges up to ±15kV, which can easily damage charging control chips.

2. Grid Surges: Transient overvoltage caused by lightning strikes or large equipment switching on or off can propagate through the AC/DC module to the low-voltage circuits.

3. Failure in Humid Environments: High humidity, particularly in coastal areas, can lead to creepage along the PCB surface, accelerating component aging.

Traditional TVS diodes, due to their large packaging and high capacitance values (usually >50pF), struggle to meet the miniaturization and high-speed communication requirements of charging stations. In contrast, the SLESD8D5V0C’s 0.1μA reverse leakage current (IR) reduces standby power consumption to just 1/10th of traditional components, significantly improving charging station energy efficiency.

Parameters of Slkor Electrostatic Discharge Diode SLESD8D5V0C

 3. Typical Application Scenarios and Protection Effectiveness

In a 7kW AC charging station, this device is typically deployed in the following areas:

CP Signal Control Circuit: Protects the PWM modulation signals from electrostatic interference, ensuring stable 1kHz communication between the charging station and the vehicle’s BMS.

DC Bus Pre-Charge Loop: Suppresses voltage spikes generated by bus capacitor charging when the contactor closes, protecting the IGBT module.

Charging Gun Temperature Sensor Interface: Prevents distortion of temperature sampling due to electrostatic discharge, avoiding misjudgment of thermal runaway.

Test data shows that the device can withstand 1,000 instances of ±15kV air discharge, with performance degradation under 5%. In the 350kW supercharging station project at Muscat International Airport in Oman, this device successfully mitigated high-frequency electrostatic interference from sandstorms, reducing the charging interruption rate by 82%.

 4. Industry Trends and Device Evolution

With the implementation of the GB/T 18487.1-2025 standard, charging stations are required to achieve an IP65 protection level, which raises the bar for component moisture and heat resistance. The SLESD8D5V0C has been certified for a wide operating temperature range of -40°C to 155°C, and its lead-free, eco-friendly characteristics comply with the RoHS directive. It is already in mass production for flagship products such as Tesla’s V4 Supercharger and BYD Dolphin home chargers. As SiC devices become more widespread in charging modules, the device’s ultra-low 10pF capacitance will further enhance high-frequency switching performance, helping charging stations advance toward the 480kW ultra-fast charging era.

During the industry transformation period when the penetration rate of new energy vehicles surpasses 50%, the SLESD8D5V0C electrostatic diode, with its "small size, big energy" technological breakthrough, sets a new benchmark for charging station safety. It not only solves the volume-performance contradiction of traditional protection solutions but also provides fundamental support for the reliability of onboard charging systems through precise parameter matching. As intelligent connected vehicles and V2G technologies integrate more deeply, such miniaturized protection devices will become a key cornerstone in building a safe "vehicle-station-network" ecosystem.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.