Slkor has unveiled its next-generation electrostatic discharge (ESD) protection diode, the SLESD9B3.3S, designed for mobile devices, including smartphones, wearables, and IoT terminals. Packaged in a compact DFN1006 format, this diode offers optimal ESD protection for devices with 3.3V operating voltage, balancing miniaturized design with high-performance protection for cutting-edge devices like 5G smartphones, foldable phones, and premium TWS earbuds.

Revolutionary Packaging for Space Efficiency and Performance  

The SLESD9B3.3S utilizes a highly efficient 2.0mm × 1.0mm DFN1006 package with a thickness of only 0.4mm, incorporating a narrow 0.25mm border and 0.5mm pad spacing. This compact design optimizes the dense layout of smartphone motherboards, allowing for precise assembly with mounting error tolerance within ±0.05mm. The conductive plating on the package sidewalls enhances automated optical inspection (AOI) accuracy, reducing quality risks in high-end mobile device manufacturing.

In comparison to traditional SOT-23 packages, the DFN1006 package reduces parasitic inductance to below 0.15nH, significantly improving high-speed signal transmission. The device achieves an insertion loss of under 0.05dB at 10GHz, enabling it to be placed as close as 1.5mm behind a USB-C connector for "zero-distance" protection inside tightly packed smartphone designs.

Precision Electrical Design for Minimal Impact on Signal Integrity  

The SLESD9B3.3S offers a low junction capacitance of just 10pF, providing industry-leading stability within a voltage range of 2.7V to 3.6V. This ensures minimal interference with high-speed differential signals such as MIPI D-PHY and USB 3.1 Gen2. In practical tests, such as 4K@60Hz video transmission, the eye diagram margin retains 97.2% of its original signal integrity, showcasing the device’s exceptional performance in real-world applications.

Furthermore, the diode's step-doping process creates a gradient charge depletion region in the PN junction area, ensuring stable reverse working voltage (VRWM = 3.3V) and leakage current (IR) of just 0.01μA. This low leakage current, even under continuous operation at 85°C for 2000 hours, helps preserve battery life in devices requiring ultra-long standby times, such as smartwatches and health monitoring equipment.

Dynamic Response Characteristics and Enhanced Protection  

The SLESD9B3.3S is designed with a dual-mode triggering mechanism that ensures precise avalanche breakdown at 5V, maintaining a stable clamping voltage of 8.5V during a ±15kV IEC 61000-4-2 contact discharge test. The device's patented quantum tunneling composite structure enables a rapid transition from a high-resistance state to a low-resistance state in under 50ps, ensuring minimal voltage clamping fluctuations even in mixed wave pulse testing. It can safely absorb peak currents of up to 35A with dynamic resistance (Rdyn) as low as 0.6Ω, offering robust protection against both ESD and power noise—critical for foldable smartphones and other modern devices.

Market Trends and Future Prospects  

As smartphone technology evolves, with the adoption of 5G millimeter-wave technology, foldable screens, and UWB ultra-wideband communication, the complexity of device circuits is increasing. The market for smart terminals with high-speed interfaces is expected to exceed $85 billion by 2026, significantly driving demand for advanced ESD protection solutions.

Slkor, leveraging its expertise in compound semiconductors, is working on the development of next-generation protection devices based on GaN materials, which will further reduce junction capacitance to the 5pF range. The SLESD9B3.3S is positioned as a key enabler of this technological shift, evolving ESD protection from basic [敏感词] to comprehensive system optimization. As part of the industry's broader push for more integrated solutions, Slkor plans to incorporate electromagnetic interference filtering, over-voltage protection, and other functions into future versions of the device, setting a new standard for comprehensive circuit protection in mobile devices.

In conclusion, the launch of the SLESD9B3.3S represents a significant advancement in ESD protection technology, offering mobile device manufacturers a high-performance, miniaturized solution that maintains signal integrity while safeguarding against electrostatic discharge and power noise, with future-proofing capabilities for emerging technologies.

About Slkor：

SLKOR, headquartered in Shenzhen, China, is a rapidly emerging national high-tech enterprise in the power semiconductor sector. With R&D centers in Beijing and Suzhou, its core technical team originates from Tsinghua University. As an innovator in silicon carbide (SiC) power device technology, SLKOR's products are widely used in new energy vehicles, photovoltaic power generation, industrial IoT, and consumer electronics, providing critical semiconductor solutions to over 10,000 clients globally. The company delivers more than 2 billion units annually, with its SiC MOSFETs and 5th-generation ultrafast recovery SBD diodes setting industry benchmarks in efficiency ratio and thermal stability. SLKOR holds over 100 invention patents and offers 2,000+ product models, continually expanding its IP portfolio across power devices, sensors, and power management ICs. Certifications including ISO 9001, EU RoHS/REACH, and CP65 compliance demonstrate the company's steadfast commitment to technological innovation, lean manufacturing, and sustainable development.