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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:NPN
Vceo:10V
Ic:35mA
Pd:150mW
VCE(sat)@Ic,Ib-
hFE@Ic,Vce-
fT:8GHz
Working Temperature:+150℃@(Tj)
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