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Diode/Transistor/Rectifier
Transistors
Bipolar Transistor (BJT)
Type:NPN
Vceo:30V
Ic:5A
Pd:750mW
VCE(sat)@Ic,Ib:1V@3A,100mA
hFE@Ic,Vce:340@500mA,2V
fT:150MHz
Working Temperature:+150℃@(Tj)
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