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Features
?High density cell design for ultra Rdson
?Full characterized avalanche voltage and current
?Good stability and uniformity with high EAS
?Excellent package for good heat dissipation
?Special process technology for high ESD capability
Applications
?Power switching application
?Hard switched and high frequency circuits
?DC/DC converter
?Battery switch
Quick reference date
| Symbol | Parameter | Conditions | Max | Unit |
| VDS | drain-source voltage | Tamb = 25°C | 100 | V |
| VGS | gate-source voltage | Tamb = 25°C | ±20 | V |
| ID | drain current |
Tamb = 25 °C VGS = 100 V |
15 | A |
| RDSon | drain-source on-state resistance |
Tj = 25 °C VGS = 10 V ID= 8A |
115 | mΩ |
About Slkor
With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs, diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.


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