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Bipolar Transistor (BJT)
Transistor, semiconductor transistor, also known as bipolar transistor, is a semiconductor device that can control current. According to its structure, it is divided into, NPN transistor, PNP transistor. It has the function of voltage or current amplification, which can be used in amplification circuits, oscillation circuits, modulation and demodulation circuits, switching circuits and so on.
13001 NPN Bipolar Transistor SOT-23
VCEO(V)：400V
PD(W)(PD(W))：750mW
VCE(sat)(V)(VCE(sat)(V))：500mV
fT(MHz)(fT(MHz))：8MHz
Package(Package)：SOT-23
IC(A)(IC(A))：200mA
13001S NPN Bipolar Transistor TO-92
The Polar NPN High-Voltage Transistor is designed for robust performance in high-voltage applications. With a collector-emitter voltage rating (Vceo) of 450V and a maximum collector current (Ic) of 0.2A, this transistor is ideal for power switching and amplification tasks. It features a power dissipation (Pd) capability of 0.625W and a low collector-emitter saturation voltage (VCE(sat)) of 0.4V at 50mA collector current and 10mA base current. The transistor also provides a transition frequency (fT) of 8MHz, ensuring effective operation at high frequencies. Its durability and efficiency make it a reliable choice for demanding electronic systems.
2N2222A NPN Bipolar Transistor TO-92
Silicon NPN transistor in a TO-92 Plastic Package.
2N3904 NPN BJT Transistor TO-92
2N3904 NPN BJT Transistor TO-92
2N3906 NPN Bipolar Transistor TO-92
The 2N3906 is a versatile NPN bipolar transistor renowned for its reliability and efficiency in various electronic circuits. Encapsulated in a TO-92 package, this transistor is designed to handle a maximum collector-emitter voltage (Vceo) of -40V and a continuous collector current (Ic) of -200mA. With a power dissipation (Pd) rating of 625mW, it efficiently manages heat dissipation under typical operating conditions. The 2N3906 features a high transition frequency (fT) of 250MHz, making it suitable for applications requiring high-speed switching and signal amplification.
2N5401 PNP Bipolar Transistor TO-92
VCEO(V)：150V
PD(W)(PD(W))：625mW
VCE(sat)(V)(VCE(sat)(V))：500mV
fT(MHz)(fT(MHz))：300MHz
Package(Package)：TO-92
IC(A)(IC(A))：600mA
2N5551 NPN Bipolar Transistor TO-92
VCEO(V)：160V
PD(W)(PD(W))：625mW
VCE(sat)(V)(VCE(sat)(V))：200mV
fT(MHz)(fT(MHz))：300MHz
Package(Package)：TO-92
IC(A)(IC(A))：600mA
2SA1015-B PNP Bipolar Transistor TO-92
The 2SA1015-B PNP Bipolar Transistor designed to deliver exceptional performance and reliability in a wide range of electronic applications. With its advanced specifications and robust design, this transistor stands out for its efficiency in signal amplification and switching operations.
2SA1037-R PNP Bipolar Transistor SOT-23
The 2SA1037-R PNP Digital Transistor is a high-performance PNP transistor designed to deliver reliable operation in demanding electronic applications. With a maximum collector-emitter voltage (Vceo) of 50V, it is well-suited for various switching and amplification tasks. The transistor boasts a high transition frequency (fT) of 140MHz, making it ideal for high-speed signal processing.
2SA1162-Y PNP Bipolar Transistor
2SA1162-Y PNP Bipolar Transistor
2SA1213-Y PNP Bipolar Transistor
2SA1213-Y PNP Bipolar Transistor
2SA1661-Y PNP Bipolar Transistor SOT-89
The 2SA1661-Y PNP Digital Transistor is a high-performance transistor designed to meet the demands of modern electronic applications. With its robust voltage handling capabilities and high frequency response, this transistor offers reliable performance and efficiency in a variety of circuits. The 2SA1661-Y PNP Digital Transistor is particularly suited for high-frequency and high-temperature environments, ensuring stability and durability even under challenging conditions.
2SA1774-R PNP Bipolar Transistor SOT-523
VCEO(V)：50V
PD(W)(PD(W))：150mW
VCE(sat)(V)(VCE(sat)(V))：500mV
fT(MHz)(fT(MHz))：140MHz
Package(Package)：SOT-523
IC(A)(IC(A))：150mA
2SA1797-Q PNP Bipolar Transistor
2SA1797-Q PNP Bipolar Transistor
2SA812-M7 PNP Bipolar Transistor
2SA812-M7 PNP Bipolar Transistor
2SB1188-R PNP Bipolar Transistor SOT-89
The High-Performance NPN Transistor is designed for demanding electronic applications requiring robust performance and reliability. With a Vceo rating of -32V and a maximum Ic of -2A, this transistor delivers dependable power handling and switching capabilities.
2SB1197KR PNP Bipolar Transistor
VCEO(V)：32V
PD(W)(PD(W))：200mW
VCE(sat)(V)(VCE(sat)(V))：400mV
fT(MHz)(fT(MHz))：150MHz
Package(Package)：SOT-23
IC(A)(IC(A))：800mA
2SB1260-R PNP Bipolar Transistor SOT-89
The 2SB1260-R PNP Bipolar Transistor is a robust and versatile component designed for high-reliability applications in various electronic systems. Engineered to handle up to 80V of collector-emitter voltage, this transistor ensures stable performance even in demanding environments. With its compact design and excellent thermal characteristics, this is ideal for applications requiring precise control and efficiency.
2SB1261 PNP Bipolar Transistor
2SB1261 PNP Bipolar Transistor
2SB1386-R PNP Bipolar Transistor SOT-89
The 2SB1386-R PNP Digital Transistor is a versatile device optimized for high-current and high-frequency operations. With a maximum collector-emitter voltage (VCE) of 20V and a continuous collector current (Ic) rating of 5A, it is well-suited for power amplification and switching applications. This transistor features a low saturation voltage (VCE(sat)) of 0.35V at 4A collector current and 0.1A base current, ensuring minimal power loss and efficient performance.
| 400V | 750mW | 500mV | 8MHz | SOT-23 | 200mA | |
| 150V | 625mW | 500mV | 300MHz | TO-92 | 600mA | |
| 160V | 625mW | 200mV | 300MHz | TO-92 | 600mA | |
| 50V | 150mW | 500mV | 140MHz | SOT-523 | 150mA | |
| 32V | 200mW | 400mV | 150MHz | SOT-23 | 800mA | |
ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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