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2SB1261 PNP Bipolar Transistor
2SB1261 PNP Bipolar Transistor
Product Overview
2SB1261 is a PNP transistor manufactured by Slkor. It is a high-performance power semiconductor device suitable for power amplification and switching applications.
Key Technical Specifications
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -60V Collector Current (Ic): -3A Power Dissipation (Pc): 10W Collector Cut-off Current (Icbo): -10μA Collector-Emitter Saturation Voltage (VCE(sat) @ Ic, Ib): -0.3V @ -1.5A, -0.15A DC Current Gain (hFE @ Ic, Vce): 60 @ -0.2A, -2V Operating Temperature: -55℃ to +150℃ (Tj) Package: TO-252
Main Features and Advantages
Moderate Collector-Emitter Breakdown Voltage (Vceo): The -60V Vceo makes it suitable for general low-to-medium voltage circuit designs. High Collector Current (Ic): The -3A collector current supports medium-power application scenarios. High Power Dissipation (Pc): 10W power rating delivers strong power handling capability. Low Collector Cut-off Current (Icbo): -10μA cut-off current helps reduce power consumption. Low Collector-Emitter Saturation Voltage (VCE(sat)): -0.3V @ -1.5A, -0.15A features low voltage drop and improves efficiency. Moderate DC Current Gain (hFE): 60 @ -0.2A, -2V enables precise gain control.
Applications
The 2SB1261 transistor is widely used in high-power electronic equipment and circuits such as power amplifiers, switching power supplies, motor drivers and power management circuits.
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Longevity
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ShenzhenSLKORMicroSemiconCo., Ltd.
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