The difference between the IGBT discrete and the IGBT module IGBT module can be regarded as the functional improvement and upgrade of the IGBT discrete. Their application fields are basically the same. However, due to the integration of various drivers and protection circuits, the installation of the IGBT module is greatly convenient for users. With the adoption of new packaging technology, the performance of IGBT has also been greatly improved, expanding the application field of IGBT. The IGBT power module is driven by IC, various driving protection circuits, high -performance IGBT chips, and new packaging technology. From the composite power module PIM to the smart power module IPM, the electronic electronic building PEBB, and the power module iPem. PIM is developing in the direction of high -voltage high -voltage current, and the product level is 1200-18

Introduction: Electronic devices are a very complicated system. The defects and failures of the packaging process are also very complicated. Therefore, the research packaging defect and failure need to have a systematic understanding of the packaging process, so as to analyze the causes of defects from multiple angles. 1. The failure mechanism of packaging defects and failure of the failure and failure can be divided into two categories: excessive stress and wear. Excessive stress failure is often instantaneous and catastrophic; grinding loss is long -term cumulative damage. It is often first indicated as performance degradation, and then the device is invalid. The type of failure can be divided into mechanical, thermal, electrical, radiation and chemical loads. Factors affecting packaging defects and failure are diverse, material ingredients

How much do you know about chip packaging? Why should the chip be encapsulated? What are the types of chip packaging? Chip packaging: In simple terms, it is to put the integrated circuit nude (DIE) produced by Foundry on a substrate with a bearing effect, then lead the tube foot, and then fix the packaging into a whole. Chip packaging function: chip packaging plays the role of placing, fixing, sealing, protecting the chip and enhancing electrical properties, and it is also the bridge between the world and external circuits of the chip-chip connection to the pins of the package shell with a wire connection to the pin shell pins. These pins are connected to other devices through the wires on the printed board. Therefore, packaging plays an important role in the CPU and other LSI integrated circuits. The world packaging type of chip

GD32 is a single chip microcomputer developed in China. It is said that the developer is from ST Company, and GD32 is also made with STM32 as a template. Therefore, GD32 and STM32 are the same in many places.However, GD32 is a different product after all, and it is impossible to follow STM32 for everything. Some self-developed products are still different.We won't talk about the same places. Here are the different places.

Evolution of CIS Packaging

Vehicle-mounted radar is one of the core sensors of Advanced Assisted Driving (ADAS) and unmanned driving, and the vehicle-mounted radar chip is the core of vehicle-mounted radar. Nowadays, the highly integrated (MMIC+DSP/MCU) vehicle-level chip provides a key way for miniaturization, high reliability, stability and low cost of radar, and its importance is self-evident.

Now "end-to-end" is popular. Let's take cell phone call as an example and observe the whole process of signal from cell phone to base station to see what baseband and RF are for.

TVS Diodes vs Zener Diodes: Compared to traditional Zener diodes, TVS TVS diodes have a larger P/N junction area. This structural improvement allows TVS to have stronger high voltage withstand capability while reducing voltage cut-off rate, so it has a be

1. What is a fast recovery diode Fast recovery diodes are commonly used in higher frequency rectification and freewheeling products. Generally used for the input part of the power module, the frequency is not high, no need to use fast recovery diodes,

1. Regarding the relationship between the peak value of absorbed power of transient voltage and the pulse width of transient voltage, the manual only gives the peak value of absorbed power under a specific pulse width, while the pulse width in the actual

ESD electrostatic protector is an overvoltage, anti-static protection component, used to protect sensitive circuits in electronic equipment from the influence of ESD (electrostatic discharge), asThe purpose is to transfer the ESD stress from the sensitive component, so that the current flows through the protective component instead of the sensitive component, while maintaining the low voltage on the sensitive component; ESD staticThe electrical protector should also have low leakage and low capacitance characteristics, which will not reduce the circuit function; will not cause damage to high-speed signals, and will protect against multiple stresses.The function of the protection element will not be reduced.

The TVS tube is a high-efficiency protection device. When the two ends are subjected to an instantaneous high-energy impact, the TVS tube can instantly convert its high-resistance characteristics into low-resistance characteristics, absorb large currents, and clamp the voltage at both ends of the TVS tube. At a certain value (the withstand voltage value of the TVS tube), the rear circuit is protected from the impact of transient high energy and the safety of the circuit is protected. As shown below. To put it simply, if the voltage impact that the circuit can withstand is not higher than DC24V, then weld a 26V TVS tube at the power supply. When the power supply voltage does not exceed 26V, the TVS tube is in a high-impedance state; After a pulse higher than 26V, the TVS tube can quickly clamp the circuit voltage to 24V, thus ensuring the safety of the circuit board.

The advantages of TVS tubes: 1. The response speed is extremely fast (Ps level); 2. The breakdown voltage ranges from 6.12V to 550V; 3. The clamping voltage is more accurate.

No matter how the TV is generated here, such as direct or indirect lightning strikes, electrostatic discharge, large-capacity load switching and other factors cause surges. The voltage ranges from a few volts to tens of kilovolts or even higher.

Its main function is current amplification (analog circuit) and switching action (digital circuit).

Its common feature is that it has three electrodes, which is the origin of the abbreviation "triode". Generally speaking, the interior of the triode is a three-layer structure composed of P-type semiconductors and N-type semiconductors, which are divided into NPN type and PNP type according to the hierarchical order.

Parasitic Capacitance and Temperature Characteristics of MOSFET

When we purchase and make circuit solutions, we often need to consider the temperature of the components. After all, each component has a temperature range limit. At this time, we need to calculate the temperature of the components before selecting suitable components. Then the original components How to calculate the temperature change, the editor below will share with you the calculation method of the component temperature:

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly. Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most of them are currently manufactured using silicon-based IGBTs. However, the shift to SiC-based MOSFETs has doubled power density and accelerated switching speed in smaller, lighter packages. The requirements for high voltage and operation in hot and harsh environments are becoming increasingly demanding for electric vehicles and charging stations. However, due to the higher manufacturing and packaging costs of wide bandgap materials, it will take some time for silicon carbide (SiC) to gain a solid footing. Nevertheless, this situation is changing. Victor Veliadis, executive Director and Chief Technology Officer of PowerAmerica, stated that the prices of SiC power modules are now comparable to silicon-based modules, which in turn promotes supply partnerships and the construction of new SiC factories. There is still much work to be done. SiC wafer technology needs to be upgraded. Manufacturing these devices requires 20% new process tools and 80% improved tools. Our goal is to accelerate the turnover speed of integrated and discrete power devices, which is why automotive manufacturers are turning to direct wafer-to-module collaboration with foundries.

Driven by the increasing demand in the automotive terminal market and the price parity with silicon, the production of silicon carbide (SiC) is growing rapidly. Thousands of power semiconductor modules have already been used in electric vehicles for on-board charging, traction inverters, and DC-to-DC conversion. Most of them are currently manufactured using silicon-based IGBTs. However, the shift to SiC-based MOSFETs has doubled power density and accelerated switching speed in smaller, lighter packages. The requirements for high voltage and operation in hot and harsh environments are becoming increasingly demanding for electric vehicles and charging stations. However, due to the higher manufacturing and packaging costs of wide bandgap materials, it will take some time for silicon carbide (SiC) to gain a solid footing. Nevertheless, this situation is changing. Victor Veliadis, executive Director and Chief Technology Officer of PowerAmerica, stated that the prices of SiC power modules are now comparable to silicon-based modules, which in turn promotes supply partnerships and the construction of new SiC factories. There is still much work to be done. SiC wafer technology needs to be upgraded. Manufacturing these devices requires 20% new process tools and 80% improved tools. Our goal is to accelerate the turnover speed of integrated and discrete power devices, which is why automotive manufacturers are turning to direct wafer-to-module collaboration with foundries.