The PRTR5V0U2X ultra-low-capacitance ESD diode array launched by Slkor provides nearly “invisible” static and transient protection for 5 V systems with a typical line-to-line capacitance of 0.6 pF, a clamping voltage of 15.5 V, a 5 V operating window, and a leakage current of 1 µA.

Its primary mission is to instantaneously divert energy to the ground plane before ESD, cable discharge (CDE), or electrical fast transient (EFT) reaches sensitive pins, acting as an “invisible shield” between high-speed signals and external surges. Traditional TVS devices often increase capacitance to enhance capacity, which slows down the edges. However, the PRTR5V0U2X, through silicon avalanche technology, simultaneously reduces both capacitance and clamping voltage, making it a “silent guardian” in digital TVs, set-top boxes, laptops, and mobile computing devices.

Precision Protection Window

VRWM: 5 V – perfectly matching the signal swing of USB-2.0 and MDDI, preventing false triggering in daily use.

VBR min: 6 V – 1 V higher than the maximum operating level, providing a safety margin without wasting clamping space.

This compact 5 V–6 V range ensures that data lines are not pulled down during high-speed switching and can conduct promptly when surges occur.

Low Clamping, Low Stress

Official data shows that under a 1 A, 8/20 µs pulse, VC is only 15.5 V, lower than the common 5 V I/O withstand voltage limit, compressing transient stress within the chip’s safe zone. If the surge rises to 5 A, the clamping voltage rises to 25 V, still well below the absolute rating of most CMOS ports.

0.6 pF Line-to-Line Capacitance

Measured CJ(line-line) = 0.6 pF (typ), CJ(line-GND) = 1.2 pF (max), at 1 MHz and 0 V bias. Such low capacitance keeps insertion loss within the 3 GHz range negligible, ensuring that the USB-HS eye diagram is sufficiently open and handling 480 Mbps signals with ease.

1 µA Leakage Current

At 25 °C and 5 V reverse bias, IR is only 1 µA (max), negligible compared to milliamp-level loads, extending the standby time for battery-powered portable devices. The device is packaged in UL 94V-0 plastic, with a working temperature range of -55 °C to +150 °C, suitable for automotive or industrial environments.

SOT-143 Miniature Package

The 4-pin package measures 2.9 mm × 1.3 mm, saving half the area compared to traditional SOT-23. It is compatible with high-temperature reflow at 260 °C for 10 s, and comes in 7-inch tape and reel with 3000 pieces per reel, facilitating high-speed placement. The pins are coated with matte tin, meeting RoHS and MSL 1 requirements.

Typical Application Scenarios

Digital TV: USB upgrade port, HDMI sideband signal

Set-top box: USB 2.0 OTG, 1394 FireWire

Laptop: USB-A/C port, MDDI camera flex cable

Handheld terminal: keyboard backlight control line, SIM card seat data line

In-vehicle entertainment: IVI USB Hub, camera link

Layout and Practical Suggestions

Place the device within 5 mm of the connector, as shorter traces reduce parasitic inductance. Differential lines should be symmetrically routed with impedance maintained at 90 Ω±10%. The reference layer should be windowed directly below and connected to the TVS GND pad to avoid “detour” ground lines.

For simulation, S-parameters, IBIS-AMI, and SPICE models can be downloaded from the Slkor official website (SLKOR Semiconductor: Discrete Semiconductors, TVS、ESD、diodes、 components、transistors、mosfet、igbt、Rectifier、Discrete Power Devices、SCR、TRIAC、Zener Diode; Integrated Semiconductors, Op-amp、hall sensor、 Linear Regulator / LDO、DC-DC Convertor、AC-DC Convertor and Optocoupler) and directly imported into ADS, Sigrity, or HFSS for full-link verification of channel eye diagrams, COM, and BER. The FAE team responds within 24 hours, supporting on-site ESD gun testing and joint debugging.

The PRTR5V0U2X, with its 0.6 pF line-to-line capacitance, 15.5 V clamping voltage, precise 5 V/6 V protection window, and 1 µA leakage current, sets a new benchmark for “unfelt” ESD protection of 5 V high-speed digital interfaces. It provides a robust and silent protective barrier for the next generation of lighter, thinner, faster, and more reliable electronic products.

About Slkor：

SLKOR, headquartered in Shenzhen, China, is a rapidly emerging national high-tech enterprise in the power semiconductor sector. With R&D centers in Beijing and Suzhou, its core technical team originates from Tsinghua University. As an innovator in silicon carbide (SiC) power device technology, SLKOR's products are widely used in new energy vehicles, photovoltaic power generation, industrial IoT, and consumer electronics, providing critical semiconductor solutions to over 10,000 clients globally. The company delivers more than 2 billion units annually, with its SiC MOSFETs and 5th-generation ultrafast recovery SBD diodes setting industry benchmarks in efficiency ratio and thermal stability. SLKOR holds over 100 invention patents and offers 2,000+ product models, continually expanding its IP portfolio across power devices, sensors, and power management ICs. Certifications including ISO 9001, EU RoHS/REACH, and CP65 compliance demonstrate the company's steadfast commitment to technological innovation, lean manufacturing, and sustainable development.

PRTR5V0U2XTo Product Page