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PD: 1000mW
VZ(Nom) @ IZT: 4.7V @ 53mA
VZ(Min) @ IZT: 4.5V @ 53mA
VZ(Max.) @ IZT: 4.93V @ 53mA
ZZT @ IZT: 8Ω @ 53mA
IR @VR: 10µA @ 1V
Package: SOD-123
Silicon Planar Zener Diodes
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The MM1W4V7 Zener diode, enclosed in an SOD-123 package, is engineered for precise voltage regulation with a nominal Zener voltage of 4.7V at a test current of 53mA. It features a breakdown voltage range from 4.5V to 4.93V, ensuring reliable performance under varying conditions. The diode boasts a maximum dynamic impedance of 8? at 53mA and a low reverse leakage current of 10μA at 1V. With a power dissipation capability of 1000mW, it is designed for high-efficiency and compact applications.
Features
● Total power dissipation: Max. 1 W.
● Wide zener reverse voltage range 3.3V to 330V.
● Small plastic package suitable for surface mounted design.
Applications
● Consumer electronics
● Telecommunications
● Automotive systems
● Industrial applications
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.













