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FDN306P P-Channel Enhancement MOSFET SOT-23
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
General Description
The FDN306P P-Channel Enhancement MOSFET is designed to offer robust performance in negative voltage applications, housed in a compact SOT-23 package. This MOSFET is optimized for high-efficiency switching and minimal power loss, making it an ideal choice for a variety of electronic circuits that operate with negative voltages.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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