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SL3424 N-Channel Enhancement MOSFET SOT-23

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● High Speed switching

Description

This N-Channel MOSFET provides reliable operation with a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.8A. With a low on-resistance (Rds(on)) of just 43mΩ at a gate-source voltage (Vgs) of 10V and a drain current of 3.8A, this MOSFET ensures minimal power loss and efficient performance. The threshold voltage (Vgs(th)) is a low 0.5V, enabling it to switch on with minimal gate drive.


Features

● Trench Power LV MOSFET technology

● High density cell design for low RDS(ON)

● High Speed switching


Application

● Battery protection

● Load switch

● Power management


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