Service Hotline
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Description
This N-Channel MOSFET provides reliable operation with a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 3.8A. With a low on-resistance (Rds(on)) of just 43mΩ at a gate-source voltage (Vgs) of 10V and a drain current of 3.8A, this MOSFET ensures minimal power loss and efficient performance. The threshold voltage (Vgs(th)) is a low 0.5V, enabling it to switch on with minimal gate drive.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Application
● Battery protection
● Load switch
● Power management
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.












