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FDN337N N-Channel Enhancement MOSFET SOT-23
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Description
This N-Channel MOSFET is designed to deliver high performance in various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V, and a continuous drain current (Id) of 2.2A. With a power dissipation (Pd) rating of 0.5W, this MOSFET provides reliable operation while maintaining low power consumption.
Features
● Trench Power LV MOSFET technology
● High density cell design for low RDS(ON)
● High Speed switching
Application
● Battery protection
● Load switch
● Power management
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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