Service Hotline
● Trench Power LV MOSFET technology
● High Power and current handing capability
Description
The BSS205N N-Channel Enhancement MOSFET SOT-23 is a versatile and high-performance semiconductor component designed for reliable and efficient switching applications. With a robust maximum drain-source voltage of 20V and a continuous drain current rating of 2.5A, this MOSFET offers excellent power handling and low resistance for a wide range of electronic circuits.
Features
● Trench Power LV MOSFET technology
● High Power and current handing capability
Application
● PWM application
● Load switch
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.












