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BSS205N N-Channel Enhancement MOSFET SOT-23

● Trench Power LV MOSFET technology

● High Power and current handing capability

Description
The BSS205N N-Channel Enhancement MOSFET SOT-23 is a versatile and high-performance semiconductor component designed for reliable and efficient switching applications. With a robust maximum drain-source voltage of 20V and a continuous drain current rating of 2.5A, this MOSFET offers excellent power handling and low resistance for a wide range of electronic circuits.

Features

● Trench Power LV MOSFET technology

● High Power and current handing capability


Application

● PWM application

● Load switch



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