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Today, we will introduce the SL80N10 TO-220 Medium-Voltage N-Channel Power MOSFET from Slkor. The SSL80N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications.
Advantages
?Easy to Mount
?Space Savings
?High Power Density
Features
?TrenchFET Power MOSFET
?Ultra-Low On Resistance
?Low Package Inductance
?175°C Maximum Junction Temperature
Applications
?DC/DC Converters and Off-line UPS
?Primary Switch for 24V and 48V
?High Current Switching
?High Voltage Synchronous Recifier
Quick reference data
| Symbol | Parameter | Conditions | Max | Unit |
| VDS | drain-source voltage | Tamb = 25°C | 100 | V |
| VGS | gate-source voltage | Tamb = 25°C | ±20 | V |
| ID | drain current |
Tamb = 25 °C VGS = 100 V |
80 | A |
| RDSon | drain-source on-state resistance |
Tj = 25 °C VGS = 10 V ID= 8A |
6.6 | mΩ |
About Slkor
With an elite team from prestigious Chinese Tsinghua University and Korean Seoul Yonsei University, Shenzhen Slkor Micro Semicon Co., Ltd. is dedicated to the third generation semiconductor SiC power devices and conventional semiconductor devices. We are strong on the relevant methodologies, new materials, new technologies and new products. Our products cover discrete devices and ICs, diodes, transistors, power devices, power management chips, and analogue chips etc. Under the strong leadership of Mr. Song Shiqiang, the CEO of Slkor, starts from an IP design house, Slkor is now a national high-tech enterprise covering the R&D, production and sales service of semiconductor devices. Slkor provides quality domestic equivalents of semiconductor from major international players. For prompt services, Slkor has two flagship stores in the world famous hardware valley Shenzhen Huaqiangbei.


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