Slkor BFR360F High-Frequency Low-Noise RF Transistor: SOT-323 Microwave Signal Amplification Device

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2026-09-08 10

In high-frequency circuit systems such as wireless communication, microwave oscillation, RF reception and cable TV signal processing, the noise performance, frequency band adaptability, signal linearity and parasitic parameters of devices greatly affect the signal transmission quality and operational stability of the whole equipment. Conventional general-purpose transistors have limited high-frequency performance with relatively high noise and large parasitic junction parameters, making them unsuitable for weak signal amplification in GHz-band circuits. The Slkor BFR360F is an NPN silicon microwave RF transistor packaged in compact SOT-323 SMD form factor. Optimized for low-current high-frequency operation and compatible with 3.3V~5V common DC power supply systems, it is widely applied in high-frequency amplification and microwave oscillation circuits, serving as a well-adapted domestic device for civilian high-frequency RF circuit designs.

1. Core Product Parameters

Device Type: NPN High-Frequency RF Transistor Collector-Emitter Voltage (VCEO): 6V Collector Current (IC): 35mA Power Dissipation (PD): 300mW Collector-Emitter Saturation Voltage (VCE(sat)): 6V Transition Frequency (fT): 12GHz Package: SOT-323

2. Core Product Features

2.1 Excellent Low-Noise RF Performance

The device features a noise figure of approximately 1.0dB at 1.8GHz, delivering reliable noise suppression capability. It effectively reduces background noise interference in RF circuits, amplifies weak high-frequency signals clearly, and improves signal fidelity and reception sensitivity of RF receiving circuits, suitable for various precision high-frequency signal processing scenarios.

2.2 Wide-Band High-Frequency Adaptability

With a transition frequency of 12GHz, the device exhibits stable high-frequency response. It supports signal amplification for oscillation circuits within 4.0GHz, covering mainstream civilian RF and microwave frequency bands. It fulfills multiple circuit functions including signal amplification, circuit oscillation and signal mixing with versatile scenario adaptability.

2.3 Stable Signal Output with Optimized Electrical Characteristics

Featuring low leakage current and small junction capacitance, the device mitigates signal attenuation and phase deviation during high-frequency operation. Equipped with moderate dynamic range and favorable current linearity, it maintains low signal distortion and smooth output waveforms, ensuring steady operation of high-frequency circuits.

2.4 Compatibility with Conventional Low-Voltage Systems

Designed for 3.3V~5V collector DC power supply, the device matches the mainstream power architecture of consumer electronics, miniature wireless devices and IoT modules. With a rated operating current of 35mA, it fits low-current continuous operation and supports lightweight, low-power high-frequency circuit design.

2.5 Miniature Package for Miniaturized Mass Production

Adopting the compact SOT-323 SMD package, the device occupies minimal PCB space and supports automated SMT mounting with stable soldering performance for mass production. Backed by Slkor’s mature manufacturing process, it delivers consistent parameter performance and provides pin-to-pin compatibility with imported equivalent devices, featuring stable supply and favorable cost performance.

3. Main Application Fields

Leveraging reliable high-frequency performance, low-noise characteristics and stable linear output, the Slkor BFR360F is widely used in civilian high-frequency microwave circuits, including cable TV signal amplification modules, satellite TV tuning and receiving circuits, RF units for wireless intercoms, cordless phone communication modules, radar induction circuits, wireless remote control and data transmission modules, RFID radio frequency identification systems, optical fiber communication signal amplification circuits, as well as amplifiers, oscillators, mixers and detectors for VHF and UHF bands. It is well suited for small-sized high-frequency wireless devices powered by 3.3V~5V voltage.

4. Engineering Design Guidelines

Operating Condition Matching: Optimized for low-voltage and low-current high-frequency scenarios. Design strictly according to rated voltage, current and power specifications to ensure long-term operational stability.

PCB Layout Optimization: High-frequency circuits are sensitive to wiring. Keep RF input and output traces short and tidy with proper impedance matching to minimize parasitic interference on high-frequency signals.

Power Supply Noise Reduction: Deploy high-frequency decoupling capacitors near power pins to filter power supply clutter, suppress crosstalk from digital circuits and guarantee pure RF signal quality.

ESD Protection: High-frequency semiconductor devices are sensitive to static electricity. Standard ESD protection procedures are required during welding and assembly to avoid performance damage caused by static discharge.

5. Product Summary

The Slkor BFR360F is an NPN RF transistor tailored for civilian high-frequency applications. Benefiting from 12GHz transition frequency, 1.0dB low noise at 1.8GHz, stable current linearity and small junction capacitance, it supports microwave signal amplification and oscillation within 4GHz. Compatible with 3.3V~5V low-voltage power supply and equipped with miniature SOT-323 package, it balances excellent performance, compact size and practicality. As a reliable domestic replacement device, it delivers outstanding adaptability for miniature wireless high-frequency equipment and civilian RF small-signal circuit design.

Slkor introduction
According to Song Shiqiang, Slkor Semiconductor (https://www.slkormicro.com) grandly opened its third franchised store in Huaqiangbei on August 14, 2026. The store mainly offers MOSFETs, power-management ICs, Hall elements, optocouplers, IGBTs, SiC silicon-carbide components, AC/DC devices, TVS diodes, Schottky diodes, thyristors and other electronic components.

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