Our Advantages
- Ultra-high frequency up to 12GHz for wideband RF performance
- Extremely low noise figure (1.0dB typical at 1.8GHz)
- High power gain and wide dynamic range
- Miniature SOT-323 package for high-density RF designs
- Low capacitance and low leakage for high sensitivity
- Stable linearity and consistent RF performance
- Wide temperature range for communication equipment
Description
BFR360F is a NPN silicon microwave low-noise RF transistor in SOT-323 surface-mount package. It features high frequency, low noise, high gain, and excellent linearity, optimized for VHF/UHF, CATV, satellite, and wireless communication amplification.
FEATURES
- Microwave low-noise silicon bipolar RF transistor
- SOT-323 miniature surface mount package
- High frequency: fT = 11–12GHz
- Low noise figure: NF = 1.0dB at 1.8GHz
- High power gain: S21 up to 10.5dB
- DC current gain: hFE = 90–160
- Low capacitance and low leakage current
- Junction/storage temperature: −65℃ to +150℃
- Marking: FBs
Applications
- TV tuners and satellite receivers
- CATV and broadband amplifiers
- VHF/UHF amplifier / oscillator / mixer
- Radar and sensor systems
- Wireless remote and data transmission
- RFID and RF communication modules
- High-frequency signal receiving circuits