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BFR360F NPN Bipolar Transistor SOT-323

BFR360F is a NPN silicon microwave low-noise RF transistor in SOT-323 surface-mount package. It features high frequency, low noise, high gain, and excellent linearity, optimized for VHF/UHF, CATV, satellite, and wireless communication amplification.

Our Advantages


  • Ultra-high frequency up to 12GHz for wideband RF performance
  • Extremely low noise figure (1.0dB typical at 1.8GHz)
  • High power gain and wide dynamic range
  • Miniature SOT-323 package for high-density RF designs
  • Low capacitance and low leakage for high sensitivity
  • Stable linearity and consistent RF performance
  • Wide temperature range for communication equipment

Description


BFR360F is a NPN silicon microwave low-noise RF transistor in SOT-323 surface-mount package. It features high frequency, low noise, high gain, and excellent linearity, optimized for VHF/UHF, CATV, satellite, and wireless communication amplification.

FEATURES


  • Microwave low-noise silicon bipolar RF transistor
  • SOT-323 miniature surface mount package
  • High frequency: fT = 11–12GHz
  • Low noise figure: NF = 1.0dB at 1.8GHz
  • High power gain: S21 up to 10.5dB
  • DC current gain: hFE = 90–160
  • Low capacitance and low leakage current
  • Junction/storage temperature: −65℃ to +150℃
  • Marking: FBs

Applications


  • TV tuners and satellite receivers
  • CATV and broadband amplifiers
  • VHF/UHF amplifier / oscillator / mixer
  • Radar and sensor systems
  • Wireless remote and data transmission
  • RFID and RF communication modules
  • High-frequency signal receiving circuits
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Description
BFR360F SOT-323​.pdf
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Datasheet
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