Our Advantages
- Dual NPN transistor in one compact package, saving PCB space and BOM cost
- High voltage rating up to 160V for high‑voltage circuit applications
- Low saturation voltage and low noise for high‑efficiency amplification
- Ultra‑small SOT‑363 package ideal for high‑density SMT design
- Epitaxial planar die for stable performance and good consistency
- Complementary with MMDT5401 for push‑pull circuit design
- Wide operating temperature range for industrial and consumer use
Description
MMDT5551 is a dual NPN epitaxial planar transistor housed in the SOT‑363 surface‑mount package. It is designed for medium‑power amplification and high‑voltage switching applications. With a collector‑emitter voltage of 160V and high transition frequency, it delivers reliable performance in compact electronic equipment. Marking: K4N.
FEATURES
- Dual NPN transistor (2 NPN in 1 package)
- Epitaxial planar die construction
- SOT‑363 ultra‑small surface mount package
- High voltage: VCEO = 160V, VCBO = 180V
- Low saturation voltage VCE(sat)
- Low noise figure (NF)
- Transition frequency: fT = 100–300MHz
- DC current gain: hFE = 80–300
- Power dissipation: PC = 0.2W
- Junction temperature: −55℃ to +150℃
- Complementary to MMDT5401
Applications
- High‑voltage signal amplification
- Medium‑power switching circuits
- Audio equipment and driver modules
- Industrial control systems
- Consumer electronics
- High‑density PCB circuits
- Portable electronic devices