Our Advantages
- Factory direct supply with stable batch consistency and competitive cost
- Strict quality control and reliable electrical performance over wide temperature range
- Compact SOT‑23 package for high‑density SMT assembly
- Wide hFE grading selection for flexible circuit design
- RoHS compliant, suitable for mass consumer and industrial applications
Description
SS30101‑Q is an NPN epitaxial silicon bipolar junction transistor (BJT) in a surface‑mount SOT‑23 package. It features high current capability, low saturation voltage, and wide safe operating area, optimized for medium‑power switching and amplification circuits. With a continuous collector current up to 2A and VCEO of 40V, it delivers stable performance across ‑55°C to +150°C. Marking: KEY. Pinout: 1–Base, 2–Emitter, 3–Collector.
FEATURES
- NPN silicon transistor, complementary pair available
- SOT‑23 surface mount package
- High DC current gain: hFE = 120–350 (graded P/Q)
- High transition frequency: fT = 100MHz typical
- Low VCE(sat) and VBE(sat) for high efficiency
- VCBO = 50V, VCEO = 40V, VEBO = 6V
- Continuous IC = 2A, PC = 300mW
- Storage temperature: ‑55°C to +150°C
Applications
- DC‑DC converters and power management
- Portable electronics and battery‑powered devices
- Consumer audio and signal amplification
- LED driver and low‑voltage motor control
- Industrial control and automotive circuits
- High‑speed switching modules