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SS30101-Q PNP Bipolar Transistor SOT-23

SS30101‑Q is an NPN epitaxial silicon bipolar junction transistor (BJT) in a surface‑mount SOT‑23 package. It features high current capability, low saturation voltage, and wide safe operating area, optimized for medium‑power switching and amplification circuits. With a continuous collector current up to 2A and VCEO of 40V, it delivers stable performance across ‑55°C to +150°C. Marking: KEY. Pinout: 1–Base, 2–Emitter, 3–Collector.

Our Advantages


  • Factory direct supply with stable batch consistency and competitive cost
  • Strict quality control and reliable electrical performance over wide temperature range
  • Compact SOT‑23 package for high‑density SMT assembly
  • Wide hFE grading selection for flexible circuit design
  • RoHS compliant, suitable for mass consumer and industrial applications

Description


SS30101‑Q is an NPN epitaxial silicon bipolar junction transistor (BJT) in a surface‑mount SOT‑23 package. It features high current capability, low saturation voltage, and wide safe operating area, optimized for medium‑power switching and amplification circuits. With a continuous collector current up to 2A and VCEO of 40V, it delivers stable performance across ‑55°C to +150°C. Marking: KEY. Pinout: 1–Base, 2–Emitter, 3–Collector.

FEATURES


  • NPN silicon transistor, complementary pair available
  • SOT‑23 surface mount package
  • High DC current gain: hFE = 120–350 (graded P/Q)
  • High transition frequency: fT = 100MHz typical
  • Low VCE(sat) and VBE(sat) for high efficiency
  • VCBO = 50V, VCEO = 40V, VEBO = 6V
  • Continuous IC = 2A, PC = 300mW
  • Storage temperature: ‑55°C to +150°C

Applications


  • DC‑DC converters and power management
  • Portable electronics and battery‑powered devices
  • Consumer audio and signal amplification
  • LED driver and low‑voltage motor control
  • Industrial control and automotive circuits
  • High‑speed switching modules
Name
Title
Description
SS30101-Q SOT-23​.pdf
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Datasheet
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