Our Advantages
- High current capability up to 5A for high‑power driving applications
- Ultra‑low saturation voltage VCE(sat) for high efficiency and low power loss
- Wide hFE range with grading options for flexible circuit matching
- Complementary to 2SB1386 for push‑pull circuit designs
- SOT‑89 surface‑mount package for easy SMT assembly and good heat dissipation
- Lead‑free and environmentally friendly, compliant with industry standards
- Stable performance over wide temperature range
Description
2SD2098 is an NPN silicon epitaxial transistor packaged in SOT‑89 surface‑mount type. It is designed for high‑current switching and amplification with excellent DC current gain and low saturation voltage. The device offers a continuous collector current of 5A, collector‑emitter voltage of 20V, and high transition frequency up to 150MHz. It is widely used in medium‑power driver and control circuits, and is complementary to 2SB1386.
FEATURES
- NPN silicon transistor, complementary pair with 2SB1386
- SOT‑89 surface‑mount package
- Low collector‑emitter saturation voltage VCE(sat)
- Excellent DC current gain characteristics
- High current capability: IC = 5A
- High transition frequency: fT = 150MHz (typ.)
- VCBO = 50V, VCEO = 20V, VEBO = 6V
- Collector power dissipation: PC = 500mW
- Junction and storage temperature: −55℃ to +150℃
- Lead‑free design
Applications
- Power management and DC‑DC converters
- Motor control and driver circuits
- LED lighting driver modules
- Audio power amplifier circuits
- Portable electronic devices
- Industrial control and home appliances
- High‑current switching circuits