Our Advantages
- Ultra-high DC current gain up to 1000 for high-sensitivity driving
- 1A continuous collector current for medium-power applications
- Compact SOT-23 package for high-density PCB assembly
- Excellent power dissipation up to 0.625W
- Stable electrical performance over wide temperature range
- Marking: 28S, easy for identification and use
- Tape-and-reel packaging suitable for automated SMT production
Description
M28S is an NPN bipolar junction transistor in SOT-23 surface‑mount package. It features high current gain, medium current capability, and low saturation voltage, designed for general‑purpose amplification and switching in consumer electronics and industrial control circuits. With a maximum collector current of 1A and power dissipation of 0.625W, it provides reliable performance in space‑constrained designs.
FEATURES
- NPN silicon transistor
- SOT-23 surface mount package
- High DC current gain: hFE = 300–1000
- Continuous collector current: IC = 1A
- Power dissipation: PC = 0.625W
- VCBO = 40V, VCEO = 20V, VEBO = 6V
- Transition frequency: fT = 100MHz (typ.)
- Low collector-emitter saturation voltage
- Junction/storage temperature: −55℃ to +150℃
- Marking code: 28S
Applications
- General-purpose signal amplification
- Medium-power switching circuits
- LED driver and indicator modules
- Portable electronic devices
- Battery-powered equipment
- Consumer electronics and home appliances
- Industrial control and sensor circuits