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SL4421 P-channel Power MOSFET SOP-8

● Green device available.

● Advanced high cell denity trench technology for uitra low RDS(ON)

● Excellent package for good heat dissipation.

Description

This P-Channel MOSFET uses advanced trench technology and design to provide excellent Rpsjon, with low gate charge. It can be used in a wide variety of applications.


Features

● VDS=-60V, ID=-8.5A, RDS(ON)<30m Ω @VGS=-10V

● Low gate charge.

● Green device available.

● Advanced high cell denity trench technology for uitra low RDS(ON)

● Excellent package for good heat dissipation.











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