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● Green device available.
● Advanced high cell denity trench technology for uitra low RDS(ON)
● Excellent package for good heat dissipation.
Description
This P-Channel MOSFET uses advanced trench technology and design to provide excellent Rpsjon, with low gate charge. It can be used in a wide variety of applications.
Features
● VDS=-60V, ID=-8.5A, RDS(ON)<30m Ω @VGS=-10V
● Low gate charge.
● Green device available.
● Advanced high cell denity trench technology for uitra low RDS(ON)
● Excellent package for good heat dissipation.
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.













